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Step dynamics in the homoepitaxial growth of 6H-SiC by chemical vapor deposition on 1° offcut substrate using dichlorosilane as Si precursor
Omar, Sabih U., Chandrashekhar, M. V. S., Chowdhury, Iftekhar A., Rana, Tawhid A., Sudarshan, Tangali S.Volume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4803881
File:
PDF, 1.98 MB
english, 2013