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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications
Lee, Dongsoo, Seong, Dong-jun, Choi, Hye jung, Jo, Inhwa, Dong, R., Xiang, W., Oh, Seokjoon, Pyun, Myeongbum, Seo, Sun-ok, Heo, Seongho, Jo, Minseok, Hwang, Dae-Kyu, Park, H. K, Chang, M., Hasan, M.,Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346733
File:
PDF, 510 KB
english, 2006