Improvement of electroluminescent performance of...

Journal of Applied Physics 2011 Vol. 109; Iss. 9

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Zhang, S. G., Zhang, X. W., Yin, Z. G., Wang, J. X., Dong, J. J., Wang, Z. G., Qu, S., Cui, B., Wowchak, A. M., Dabiran, A. M.
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Volume:
109
Year:
2011
Language:
english
DOI:
10.1063/1.3590399
File:
PDF, 3.33 MB
english, 2011
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