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Wave function penetration effects in double gate metal-oxide-semiconductor field-effect-transistors: impact on ballistic drain current with device scaling
Khan, Asif Islam, Ashraf, Md. Khalid, Haque, AnisulVolume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3079518
File:
PDF, 309 KB
english, 2009