Modelling of silicon epitaxy using silicon tetrachloride as...

Microelectronics Journal 1995 Vol. 26; Iss. 6

Modelling of silicon epitaxy using silicon tetrachloride as the source

D.K. Pal, M.K. Kowar, A.N. Daw, P. Roy
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Volume:
26
Year:
1995
Language:
english
Pages:
8
DOI:
10.1016/0026-2692(95)00012-7
File:
PDF, 559 KB
english, 1995
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