Negative gate-bias temperature stability of N-doped InGaZnO...

Applied Physics Letters 2013 Vol. 102; Iss. 8

Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors

Raja, Jayapal, Jang, Kyungsoo, Balaji, Nagarajan, choi, Woojin, Thuy Trinh, Thanh, Yi, Junsin
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Volume:
102
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4793535
File:
PDF, 1.13 MB
english, 2013
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