An MOS transistor model for RF IC design valid in all...

IEEE Transactions on Microwave Theory and Techniques 2002 / Jan. Vol. 50; Iss. 1

An MOS transistor model for RF IC design valid in all regions of operation

Enz, C.
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Volume:
50
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/22.981286
Date:
January, 2002
File:
PDF, 590 KB
english, 2002
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