Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates
Kim, Kyung-Ho, Um, Doo-Seung, Lee, Hochan, Lim, Seongdong, Chang, Joonyeon, Koo, Hyun Cheol, Oh, Min-Wook, Ko, Hyunhyub, Kim, Hyung-junVolume:
7
Language:
english
Journal:
ACS Nano
DOI:
10.1021/nn403715p
Date:
October, 2013
File:
PDF, 2.63 MB
english, 2013