Impurity-free intermixing of GaAs/AlGaAs quantum wells...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2001 Vol. 19; Iss. 5

Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiO[sub x] capping: Effect of nitrous oxide flow rate

Deenapanray, Prakash N. K., Jagadish, C.
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Volume:
19
Year:
2001
Language:
english
DOI:
10.1116/1.1406937
File:
PDF, 284 KB
english, 2001
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