Silane Flow Rate Dependence of SiO[sub x] Cap Layer Induced...

Journal of The Electrochemical Society 2000 Vol. 147; Iss. 5

Silane Flow Rate Dependence of SiO[sub x] Cap Layer Induced Impurity-Free Intermixing of GaAs/AlGaAs Quantum Wells

Deenapanray, Prakash N. K., Tan, H. H., Cohen, Michael I., Gaff, Keith, Petravic, Mladen, Jagadish, C.
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Volume:
147
Year:
2000
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1393464
File:
PDF, 411 KB
english, 2000
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