Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2009 Vol. 27; Iss. 1
Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO[sub 2]∕Dy[sub 2]O[sub 3] gate stacks grown on Ge (100) substrates
Rahman, M. S., Evangelou, E. K., Androulidakis, I. I., Dimoulas, A., Mavrou, G., Tsipas, P.Volume:
27
Year:
2009
Language:
english
DOI:
10.1116/1.3025912
File:
PDF, 471 KB
english, 2009