Etching Rate and Mechanism of Doped Oxide in Buffered...

Etching Rate and Mechanism of Doped Oxide in Buffered Hydrogen Fluoride Solution

Kikuyama, H.
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Volume:
139
Year:
1992
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2221208
File:
PDF, 596 KB
english, 1992
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