Enhancement of AlGaN/GaN high electron mobility transistors...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 03 Vol. 32; Iss. 2

Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Li, Shun, Hwang, Ya-Hsi, Hsieh, Yueh-Ling, Lei, Lei, Ren, Fan, Pearton, Stephen J., Patrick, Erin, Law, Mark E., Velez Cuervo, Camilo, Smith, David. J.
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4864070
Date:
March, 2014
File:
PDF, 1.69 MB
english, 2014
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