Three-state resistive switching in HfO2-based RRAM

Solid-State Electronics 2014 / 08 Vol. 98

Three-state resistive switching in HfO2-based RRAM

Lian, Xiaojuan, Miranda, Enrique, Long, Shibing, Perniola, Luca, Liu, Ming, Suñé, Jordi
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Volume:
98
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.04.016
Date:
August, 2014
File:
PDF, 1.89 MB
english, 2014
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