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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell
Khare, M., Ku, S.H., Donaton, R.A., Greco, S., Brodsky, C., Chen, X., Chou, A., DellaGuardia, R., Deshpande, S., Doris, B., Fung, S.K.H., Gabor, A., Gribelyuk, M., Holmes, S., Jamin, F.F., Lai, W.L.,Year:
2002
Language:
english
DOI:
10.1109/IEDM.2002.1175865
File:
PDF, 282 KB
english, 2002