Annealing effects and DLTS study on NPN silicon bipolar...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2014 / 01 Vol. 735

Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions

Liu, Chaoming, Li, Xingji, Yang, Jianqun, Rui, Erming
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Volume:
735
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
DOI:
10.1016/j.nima.2013.09.048
Date:
January, 2014
File:
PDF, 497 KB
english, 2014
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