Rapid thermal annealing effect on GaAsBi/GaAs single...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2014 / 03 Vol. 32; Iss. 2

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Grant, Perry C., Fan, Dongsheng, Mosleh, Aboozar, Yu, Shui-Qing, Dorogan, Vitaliy G., Hawkridge, Michael E., Mazur, Yuriy I., Benamara, Mourad, Salamo, Gregory J., Johnson, Shane R.
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4868110
Date:
March, 2014
File:
PDF, 1.05 MB
english, 2014
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