Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures
Dou, Chunmeng, Lin, Dennis, Vais, Abhitosh, Ivanov, Tsvetan, Chen, Han-Ping, Martens, Koen, Kakushima, Kuniyuki, Iwai, Hiroshi, Taur, Yuan, Thean, Aaron, Groeseneken, GuidoVolume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2013.12.023
Date:
April, 2014
File:
PDF, 1.93 MB
english, 2014