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Electronic properties of homoepitaxial (111) highly boron-doped diamond films
Ye, Haitao, Tumilty, Niall, Bevilacqua, Mose, Curat, Stephane, Nesladek, Milos, Bazin, Bertrand, Bergonzo, Philippe, Jackman, Richard BVolume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2837114
File:
PDF, 775 KB
english, 2008