Plasma-enhanced atomic layer deposition of silicon dioxide...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2014 / 05 Vol. 32; Iss. 3

Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor

Jeon, Ki-Moon, Shin, Jae-Su, Yun, Ju-Young, Jun Lee, Sang, Kang, Sang-Woo
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Volume:
32
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4871455
Date:
May, 2014
File:
PDF, 1.98 MB
english, 2014
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