MOS semiconductor random access memory failure rate

Microelectronics Reliability 1979 Vol. 19; Iss. 1-2

MOS semiconductor random access memory failure rate

J.E. Arsenault, D.C. Roberts
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Volume:
19
Year:
1979
Language:
english
Pages:
8
DOI:
10.1016/0026-2714(79)90365-2
File:
PDF, 387 KB
english, 1979
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