Carbon re-incorporation in phosphorus-doped Si1−yCy...

Journal of Alloys and Compounds 2013 / 3 Vol. 553

Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing

Chang, Hung-Tai, Lin, I.-Ping, Twan, Sheng-Chen, Woon, Wei-Yen, Lee, Sheng-Wei
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
553
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2012.10.158
Date:
March, 2013
File:
PDF, 1.05 MB
english, 2013
Conversion to is in progress
Conversion to is failed