Improved resistive switching phenomena observed in SiN...

physica status solidi (RRL) - Rapid Research Letters 2014 / 03 Vol. 8; Iss. 3

Improved resistive switching phenomena observed in SiN x -based resistive switching memory through oxygen doping process

Park, Ju Hyun, Kim, Hee-Dong, Hong, Seok Man, Yun, Min Ju, Jeon, Dong Su, Kim, Tae Geun
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Volume:
8
Language:
english
Journal:
physica status solidi (RRL) - Rapid Research Letters
DOI:
10.1002/pssr.201308309
Date:
March, 2014
File:
PDF, 612 KB
english, 2014
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