Reactive ion etching mechanism of plasma enhanced...

Journal of Applied Physics 1995 Vol. 78; Iss. 3

Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2 plasma

Kim, Jae-Whan, Kim, Yong-Chun, Lee, Won-Jong
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Volume:
78
Year:
1995
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.360181
File:
PDF, 749 KB
english, 1995
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