[IEEE 32nd European Solid-State Device Research Conference - Firenze, Italy (2002.9.24-2002.9.26)] 32nd European Solid-State Device Research Conference - Effects of Boron and Germanium Base Profiles on SiGe and SiGe:C BJT Characteristics
Sadovnikov, A., Printy, C., Budri, T., Loo, R., Meunier-Beillard, P., El-Diwany, M.Year:
2002
Language:
english
DOI:
10.1109/ESSDERC.2002.195005
File:
PDF, 104 KB
english, 2002