Governing factors for the formation of 4H or 6H-SiC...

Journal of Crystal Growth 2014 / 03 Vol. 389

Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach

Kang, Kyung-Han, Eun, Taihee, Jun, Myong-Chul, Lee, Byeong-Joo
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
389
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.12.007
Date:
March, 2014
File:
PDF, 9.78 MB
english, 2014
Conversion to is in progress
Conversion to is failed