Influence of the barrier composition in GaN/InxAl1−xN quantum wells properties
Kriouche, N., Watanabe, A., Oda, O., Egawa, T.Volume:
390
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.12.005
Date:
March, 2014
File:
PDF, 1.68 MB
english, 2014