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Crack-free GaN deposition on Si substrate with temperature-graded AlN buffer growth and the emission characteristics of overgrown InGaN/GaN quantum wells
Chen, Chih-Yen, Chang, Wen-Ming, Chung, Wei-Lun, Hsieh, Chieh, Liao, Che-Hao, Ting, Shao-Ying, Chen, Kuan-Yu, Kiang, Yean-Woei, Yang, C.C., Su, Wei-Siang, Cheng, Yung-ChenVolume:
396
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.03.025
Date:
June, 2014
File:
PDF, 1.50 MB
english, 2014