A 6T-SRAM With a Post-Process Electron Injection Scheme...

IEEE Journal of Solid-State Circuits 2013 / 9 Vol. 48; Iss. 9

A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy

Miyaji, Kousuke, Suzuki, Toshikazu, Miyano, Shinji, Takeuchi, Ken
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Volume:
48
Language:
english
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/JSSC.2013.2262735
Date:
September, 2013
File:
PDF, 2.35 MB
english, 2013
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