![](/img/cover-not-exists.png)
Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications
Starikov, D., Badi, N., Berishev, I., Medelci, N., Kameli, O., Sayhi, M., Zomorrodian, V., Bensaoula, A.Volume:
17
Year:
1999
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581802
File:
PDF, 268 KB
english, 1999