Plasmon Resonance Effects in GaAs/AlGaAs Heterojunction...

IEEE Transactions on Electron Devices 2014 / 5 Vol. 61; Iss. 5

Plasmon Resonance Effects in GaAs/AlGaAs Heterojunction Devices: An Analysis Based on Spectral Element Simulation

Feng Li,, Qing Huo Liu,, Klemer, David P.
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2311473
Date:
May, 2014
File:
PDF, 1000 KB
english, 2014
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