Carrier recombination dynamics of MBE grown InGaAsP layers...

Solar Energy Materials and Solar Cells 2014 / 08 Vol. 127

Carrier recombination dynamics of MBE grown InGaAsP layers with 1eV bandgap for quadruple-junction solar cells

Ji, Lian, Lu, Shulong, Wu, Yuanyuan, Dai, Pai, Bian, Lifeng, Arimochi, Masayuki, Watanabe, Tomomasa, Asaka, Naohiro, Uemura, Mitsunori, Tackeuchi, Atsushi, Uchida, Shiro, Yang, Hui
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Volume:
127
Language:
english
Journal:
Solar Energy Materials and Solar Cells
DOI:
10.1016/j.solmat.2014.03.051
Date:
August, 2014
File:
PDF, 592 KB
english, 2014
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