Effects of Post-Deposition Annealing on CeO2 Gate Prepared...

Materials Science Forum 2010 / 4 Vol. 645-648

Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC

Lim, Way Foong, Cheong, Kuan Yew, Lockman, Zainovia, Jasni, Farah Ainis, Quah, Hock Jin
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Volume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.837
Date:
April, 2010
File:
PDF, 598 KB
english, 2010
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