Study of low temperature MOCVD deposition of TiN barrier...

Microelectronic Engineering 2014 / 05 Vol. 120

Study of low temperature MOCVD deposition of TiN barrier layer for copper diffusion in high aspect ratio through silicon vias

Djomeni, Larissa, Mourier, Thierry, Minoret, Stéphane, Fadloun, Sabrina, Piallat, Fabien, Burgess, Steve, Price, Andrew, Zhou, Yun, Jones, Christopher, Mathiot, Daniel, Maitrejean, Sylvain
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Volume:
120
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2013.11.010
Date:
May, 2014
File:
PDF, 1.72 MB
english, 2014
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