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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors
A. L. Corrion, C. Poblenz, F. Wu, J. S. SpeckVolume:
103
Year:
2008
Language:
english
DOI:
10.1063/1.2919163
File:
PDF, 847 KB
english, 2008