Border traps: Issues for MOS radiation response and...

Microelectronics Reliability 1995 Vol. 35; Iss. 3

Border traps: Issues for MOS radiation response and long-term reliability

D.M. Fleetwood, M.R. Shaneyfelt, W.L. Warren, J.R. Schwank, T.L. Meisenheimer, P.S. Winokur
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Volume:
35
Year:
1995
Language:
english
Pages:
26
DOI:
10.1016/0026-2714(95)93068-l
File:
PDF, 1.17 MB
english, 1995
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