Facet formation and lateral overgrowth of selective Ge...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2008 Vol. 26; Iss. 1

Facet formation and lateral overgrowth of selective Ge epitaxy on SiO[sub 2]-patterned Si(001) substrates

Park, Ji-Soo, Bai, Jie, Curtin, Michael, Carroll, Mark, Lochtefeld, Anthony
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Volume:
26
Year:
2008
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2825165
File:
PDF, 453 KB
english, 2008
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