Hot carrier effect—model, mechanism and effects on C-V and...

Microelectronics Reliability 1996 Vol. 36; Iss. 4

Hot carrier effect—model, mechanism and effects on C-V and I-V characteristics in MOS structures

Zhao Cezhou, Zhang Desheng, Shi Baohua
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
36
Year:
1996
Language:
english
Pages:
4
DOI:
10.1016/0026-2714(96)00172-2
File:
PDF, 270 KB
english, 1996
Conversion to is in progress
Conversion to is failed