Dependence of charge trapping and tunneling on the silicon-nitride (Si[sub 3]N[sub 4]) thickness for tunnel barrier engineered nonvolatile memory applications
Jung, Myung-Ho, Kim, Kwan-Su, Park, Goon-Ho, Cho, Won-JuVolume:
94
Year:
2009
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3078279
File:
PDF, 571 KB
english, 2009