Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
2000 Vol. 18; Iss. 1
![](/img/cover-not-exists.png)
High dielectric constant (Ba[sub 0.65]Sr[sub 0.35])(Ti[sub 0.41]Zr[sub 0.59])O[sub 3] capacitors for Gbit-scale dynamic random access memory devices
Kim, Jae-Sun, Yoon, Soon-GilVolume:
18
Year:
2000
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.591175
File:
PDF, 430 KB
english, 2000