Temperature and doping dependencies of electrical...

Journal of Applied Physics 2009 Vol. 106; Iss. 1

Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

Koizumi, Atsushi, Suda, Jun, Kimoto, Tsunenobu
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Volume:
106
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3158565
File:
PDF, 402 KB
english, 2009
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