Characteristics of a-GaN films and a-AlGaN/GaN...

Journal of Applied Physics 2011 Vol. 110; Iss. 9

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

Polyakov, A. Y., Jang, Lee-Woon, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yugova, T. G., Reznik, V. Y., Pearton, S. J., Baik, Kwang Hyeon, Hwang, Sung-Min, Jung, Sukkoo, Lee, In-Hwan
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Volume:
110
Year:
2011
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3658026
File:
PDF, 831 KB
english, 2011
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