Spontaneous formation of stacking faults in highly doped...

Journal of Applied Physics 2002 Vol. 92; Iss. 10

Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing

Kuhr, Thomas A., Liu, JinQiang, Chung, Hun Jae, Skowronski, Marek, Szmulowicz, Frank
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Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1516250
File:
PDF, 473 KB
english, 2002
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