Study of Gate Oxide/Channel Interface Properties of SON...

IEEE Transactions on Nanotechnology 2011 / 05 Vol. 10; Iss. 3

Study of Gate Oxide/Channel Interface Properties of SON MOSFETs by Random Telegraph Signal and Low Frequency Noise

Trabelsi, M'hamed, Militaru, Liviu, Sghaier, Nabil, Savio, Andrea, Monfray, Stephane, Souifi, Abdelkader
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Volume:
10
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/TNANO.2010.2043112
Date:
May, 2011
File:
PDF, 593 KB
english, 2011
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