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[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon
del Alamo, J., Swirhun, S., Swanson, R.M.Year:
1985
Language:
english
DOI:
10.1109/IEDM.1985.190954
File:
PDF, 284 KB
english, 1985