Compact Analytical Model of Dual Material Gate Tunneling...

IEEE Transactions on Electron Devices 2014 / 6 Vol. 61; Iss. 6

Compact Analytical Model of Dual Material Gate Tunneling Field-Effect Transistor Using Interband Tunneling and Channel Transport

Vishnoi, Rajat, Kumar, M. Jagadesh
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2315294
Date:
June, 2014
File:
PDF, 1.58 MB
english, 2014
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