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[IEEE 2005 IEEE International SOI - Honolulu, HI, USA (03-06 Oct. 2005)] 2005 IEEE International SOI Conference Proceedings - Retention Characteristics of Zero-capacitor RAM (Z-RAM) cell based on FinFET and Tri-Gate devices

Nagoga, M., Okhonin, S., Bassin, C., Fazan, P., Xiong, W., Cleavelin, C.R., Schulz, T., Schruefer, K., Gostkowski, M., Patruno, P., Maleville, C.
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Year:
2005
Language:
english
DOI:
10.1109/SOI.2005.1563588
File:
PDF, 1.81 MB
english, 2005
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