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Novel Field Effect Diode Type Vertical Capacitorless One Transistor Dynamic Random Access Memory Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics
Imamoto, Takuya, Endoh, TetsuoVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CD08
Date:
April, 2013
File:
PDF, 1.16 MB
english, 2013