![](/img/cover-not-exists.png)
2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
Pérez-Tomás, Amador, Placidi, Marcel, Baron, N., Chenot, Sébastien, Cordier, Yvon, Moreno, J.C., Millán, José, Godignon, PhillippeVolume:
645-648
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.645-648.1207
Date:
April, 2010
File:
PDF, 282 KB
english, 2010