Bistability Characteristics of GaN/AlN Resonant Tunneling...

IEEE Transactions on Electron Devices 2014 / 5 Vol. 61; Iss. 5

Bistability Characteristics of GaN/AlN Resonant Tunneling Diodes Caused by Intersubband Transition and Electron Accumulation in Quantum Well

Nagase, Masanori, Tokizaki, Takashi
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2310473
Date:
May, 2014
File:
PDF, 2.47 MB
english, 2014
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